Fabrication of SiGe nanostructures for infrared devices
The MBE growth conditions for the Stranski-Krastanov (SK) growth mode of tensile strained Si on Ge substrates were investigated. These self-organized Si islands provide a confinement of delta2-electrons, which is of special interest for conduction-electron spin manipulation or for photoluminescence in the infrared range. Under tensile strain, the wetting layer (WL) thickness is increased and goes along with a rather ...